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Product Detailed Parameters
- Description：TRANS NPN 30V 0.1A SOT23-3
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：30 V
- Vce Saturation (Max) @ Ib, Ic：600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max)：15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：420 @ 2mA, 5V
- Power - Max：300 mW
- Frequency - Transition：100MHz
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23-3 (TO-236)
- Grade：-
- Qualification：-
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Overview
The onsemi BC849CLT1G is an NPN silicon general-purpose transistor in a SOT-23 package. It features a collector-emitter voltage of 30 V and a continuous collector current of 100 mA. The device offers a DC current gain range of 270 to 520 at IC = 2.0 mA. Electrical characteristics include a collector-base breakdown voltage of 30 V, emitter-base breakdown voltage of 5.0 V, and a gain-bandwidth product of 100 MHz. Thermal dissipation is rated at 225 mW with a junction-to-ambient resistance of 556 °C/W.
Feature Summary
- High DC current gain suitable for amplification applications
- Automotive qualification with AEC-Q101 standards
- Low noise figure performance
Applications
- General purpose amplification
- Switching circuits
- Automotive electronics requiring PPAP capability
Procurement Notes
Verify the specific suffix 'LT1G' corresponds to the 3,000-unit tape and reel packaging configuration. Confirm that the 'C' designation aligns with the required high-gain binning specifications (hFE 270–520). Ensure compatibility with SOT-23 footprint requirements during component sourcing.
Selection Notes
Select this component when a high-gain NPN transistor is required within a 30 V collector-emitter voltage limit. The BC849CLT1G is appropriate for low-noise applications due to its specified noise figure. Consider the thermal constraints of the SOT-23 package for power dissipation limits in dense circuit layouts.
Part Context
This part belongs to the BC846ALT1G series of general-purpose NPN transistors manufactured by onsemi. The series includes variants with different voltage ratings and gain bins. The BC849 variant specifically provides a lower voltage rating compared to the BC846 but maintains standard small-signal switching capabilities.
Replacement Considerations
BC849BLT1G serves as a lower gain alternative within the same voltage family. BC846ALT1G offers higher voltage ratings but requires verification of gain bin compatibility.
