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The Diotec Semiconductor BC850B-AQ is an SMD general-purpose NPN bipolar junction transistor (BJT) housed in a SOT-23 or TO-236 package. It features a maximum collector-emitter voltage of 45 V, a continuous DC collector current of 100 mA, and a power dissipation of 250 mW at 25°C ambient temperature. The device operates within a junction temperature range of -55°C to +150°C. It belongs to the Group B current gain category, providing a minimum hFE of 200 at IC = 2 mA and VCE = 5 V. The component is AEC-Q101 qualified for automotive applications.
Verify that the specific part number suffix matches the required qualification grade. Confirm the manufacturer's datasheet version aligns with the requested specifications. Ensure the ordering quantity meets the standard factory packaging requirements. Check for any RoHS compliance documentation if required by your manufacturing process.
Select this component when an NPN transistor with a 45V collector-emitter breakdown voltage is required. The BC850B variant provides a high minimum DC current gain suitable for amplification tasks. Consider the thermal resistance and power dissipation limits relative to the PCB layout and ambient operating conditions.
This component is part of the BC846 through BC850 series of SMD general-purpose NPN transistors manufactured by Diotec Semiconductor. The series includes various voltage ratings and gain groupings to cover diverse electronic design needs. The BC850B specifically targets applications requiring moderate voltage handling and high current gain characteristics.
BC846A-AQ
The -AQ suffix indicates that the component is AEC-Q101 qualified.
The maximum collector-emitter voltage (VCEO) is 45 V.
The BC850B belongs to the Group B current gain classification.