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The BC850B,215 is an NPN general-purpose transistor manufactured by Nexperia USA Inc. It is housed in a small SOT-23 surface-mounted device plastic package with three terminals. The component supports a maximum collector-emitter voltage of 45 V and a continuous collector current of 100 mA. It features a DC current gain (hFE) ranging from 200 to 450 at 2 mA and 5 V. The device has a total power dissipation of 250 mW and operates within a junction temperature range of -65 °C to +150 °C. It is qualified under the AEC-Q101 standard for automotive applications.
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Select this component when a low-voltage, low-current NPN switch or amplifier is required in a compact SOT-23 footprint. Ensure the design accounts for the 250 mW power dissipation limit and the specified hFE range. Consider the AEC-Q101 qualification if the application demands automotive-grade reliability standards.
This part belongs to the BC850 series of NPN transistors. It serves as the complement to the BC860B PNP transistor. The device is designed for surface-mount assembly on printed-circuit boards, offering a small physical profile suitable for space-constrained electronic designs requiring reliable switching performance.
The BC860B is the designated PNP complement. Verify pinout compatibility and electrical limits before substituting with other NPN transistors in the same package family.
Yes, the product data sheet confirms that this transistor has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101.
The marking code is '2F', followed by a placeholder character representing the manufacturing site code.
At VCE = 5 V and IC = 10 µA, the typical DC current gain is 240.