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The BC850B,235 is an NPN general-purpose transistor manufactured by Nexperia USA Inc. It is housed in a small SOT-23 surface-mounted device plastic package with three terminals. The component supports a maximum collector-emitter voltage of 45 V and a continuous collector current of 100 mA. It features a DC current gain (hFE) ranging from 200 to 450 at 2 mA and 5 V. The device has a total power dissipation rating of 250 mW and operates within a junction temperature range of -65 °C to +150 °C.
Verify the specific ordering suffix
Select this component when a low-voltage, low-current NPN switch or amplifier is required in a compact SMD footprint. Ensure the design accounts for the 250 mW power dissipation limit and the specified hFE range. Consider the PNP complement BC860B if complementary pairing is needed. Verify thermal management on the PCB for high-duty cycle operations.
This part belongs to the BC850 series of NPN transistors designed for general-purpose use. It serves as the NPN counterpart to the BC860B PNP transistor. The BC850B variant specifically denotes the standard gain binning configuration. It is widely used in consumer electronics and industrial control boards requiring small signal handling.
The BC850C is a higher gain variant within the same family. The BC860B is the direct PNP complement. Cross-referencing with other manufacturers requires verifying pinout compatibility and ensuring hFE and voltage ratings meet or exceed these specifications.