BC850BE6327HTSA1

BC850BE6327HTSA1

$0.20
  • Description:TRANS NPN 45V 0.1A PG-SOT23
  • Series:-

SKU:a734f53dc56a Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:TRANS NPN 45V 0.1A PG-SOT23
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT),Bulk
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):45 V
  • Vce Saturation (Max) @ Ib, Ic:600mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max):15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 5V
  • Power - Max:330 mW
  • Frequency - Transition:250MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:PG-SOT23
  • Grade:-
  • Qualification:-

Download product information

BC850BE6327HTSA1

Overview

The BC850BE6327HTSA1 is a single NPN silicon bipolar junction transistor manufactured by Infineon Technologies. It is housed in a surface-mount SOT-23-3 package with two leads and dimensions of 1.7 mm length and 0.85 mm height. The device supports a maximum collector-emitter voltage (VCEO) of 45 V, a collector-base voltage (VCBO) of 50 V, and an emitter-base voltage (VEBO) of 6 V. It handles a continuous DC collector current of 100 mA with a power dissipation of 330 mW. Key electrical parameters include a minimum gain-bandwidth product (fT) of 250 MHz, a saturation voltage of 200 mV, and a DC current gain range from 200 to 450. It operates within a temperature range of -65°C to +150°C.

Feature Summary

  • Single NPN silicon bipolar junction transistor configuration
  • High gain-bandwidth product for signal amplification
  • Automotive qualified under AEC-Q100 standards
  • Compact surface-mount SOT-23-3 packaging

Applications

  • General-purpose signal amplification circuits
  • Switching applications in consumer electronics
  • Automotive electronic control modules

Procurement Notes

Verify the component status as the source indicates it may be obsolete or nearing end-of-life. Confirm the specific ordering suffix matches the required AEC-Q100 qualification if automotive reliability is mandatory. Ensure the SOT-23-3 footprint aligns with the target PCB design. Cross-reference the datasheet revision to confirm electrical characteristics match the design requirements before finalizing procurement.

Selection Notes

Select this component when a single NPN transistor with high frequency response is required in a compact surface-mount form factor. The AEC-Q100 qualification makes it suitable for automotive environments where thermal stability up to 150°C is necessary. Consider the 100 mA current limit and 330 mW power dissipation when designing load circuits. Compare against other BC850 variants if different gain ranges or voltage ratings are needed.

Part Context

This part belongs to the BC850 series of small-signal NPN transistors from Infineon. It shares the SOT-23-3 package family with related PNP counterparts like the BC857B and complementary NPN types. The series is designed for general-purpose switching and amplification, offering a balance of performance and cost-effectiveness for mass-produced electronic devices.

Replacement Considerations

Public confirmed substitute part numbers: None identified.

BC850BE6327HTSA1BC850BE6327HTSA1
$0.20
Buy Now