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Product Detailed Parameters
- Description：TRANS NPN 45V 0.1A SOT23-3
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：45 V
- Vce Saturation (Max) @ Ib, Ic：600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max)：15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：200 @ 2mA, 5V
- Power - Max：225 mW
- Frequency - Transition：100MHz
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23-3 (TO-236)
- Grade：-
- Qualification：-
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Overview
The BC850BLT1G is an NPN silicon general-purpose transistor from the BC846ALT1G series, manufactured by onsemi. It features a collector-emitter voltage of 45 V and a continuous collector current of 100 mA. The device provides a minimum DC current gain (hFE) of 200 at IC = 2.0 mA and VCE = 5.0 V. It operates within a junction temperature range of -55°C to +150°C and has a total power dissipation of 225 mW on an FR-5 board. The component is housed in a SOT-23 package.
Feature Summary
- NPN epitaxial silicon planar design for general-purpose amplification
- High DC current gain with a minimum rating of 200
- Lead-free, halogen-free, and BFR-free construction compliant with RoHS standards
Applications
- General purpose amplifier applications
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm package type and shipping configuration. Confirm that the part number matches the required voltage and gain specifications for the intended circuit design. Ensure compliance with automotive or industrial qualification requirements if applicable, as prefixes may indicate specific manufacturing controls.
Selection Notes
Select this component for circuits requiring an NPN transistor with a 45 V collector-emitter breakdown voltage. The BC850BL variant offers a guaranteed minimum hFE of 200, suitable for moderate gain requirements. Consider the SOT-23 package constraints for thermal management when designing for maximum power dissipation limits.
Part Context
This component belongs to the BC846ALT1G series of general-purpose NPN transistors. The series includes variants with different voltage ratings and gain bands, such as BC846 (65 V), BC847/BC850 (45 V), and BC848/BC849 (30 V). The BC850BL specifically denotes the 45 V rating and the 'B' gain bin.
Replacement Considerations
BC850ALT1G
FAQ
What is the maximum collector-emitter voltage for the BC850BLT1G?
The maximum collector-emitter voltage (VCEO) is 45 V.
What is the minimum DC current gain (hFE) specified for this device?
The minimum DC current gain is 200, measured at IC = 2.0 mA and VCE = 5.0 V.
Is the BC850BLT1G qualified for automotive applications?
Devices with the 'S' or 'NSV' prefix are AEC-Q101 qualified and PPAP capable for automotive applications.
