ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：TRANS NPN 45V 0.1A SOT-323
- Series：-
- Mfr：Taiwan Semiconductor Corporation
- Package：Tape & Reel (TR)
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：45 V
- Vce Saturation (Max) @ Ib, Ic：600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max)：15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：200 @ 2mA, 5V
- Power - Max：200 mW
- Frequency - Transition：100MHz
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SC-70, SOT-323
- Supplier Device Package：SOT-323
- Grade：-
- Qualification：-
Download product information
Overview
The BC850BW is an NPN general-purpose bipolar junction transistor manufactured by Taiwan Semiconductor Corporation. It utilizes a planar epitaxial silicon design housed in a SOT-23 surface-mount package. The device supports a maximum collector current of 100 mA and a collector-emitter voltage rating of 45 V. It features a minimum DC current gain (hFE) of 200 at 2 mA and 5 V, with a transition frequency of 300 MHz. Power dissipation is rated at 250 mW, and the operating temperature range extends from -55°C to +150°C.
Feature Summary
- Planar epitaxial silicon construction for reliable small-signal amplification
- High DC current gain suitable for low-current switching applications
- Surface-mount SOT-23 packaging optimized for automated assembly
Applications
- General purpose amplifier circuits
- Low-current switching applications
- Signal processing stages
Procurement Notes
Verify the specific suffix against official manufacturer documentation to confirm exact electrical binning and packaging configuration. Ensure the component matches the required hFE grade and thermal characteristics for the target application environment before finalizing procurement specifications.
Selection Notes
Select this component when a standard NPN transistor with moderate gain and 45V breakdown is required in a compact SOT-23 footprint. Consider the 250 mW power dissipation limit and verify that the 300 MHz transition frequency meets the signal bandwidth requirements of the circuit design.
Part Context
This part belongs to the BC850 series of NPN general-purpose transistors. It shares the same physical package and basic electrical ratings as variants like BC850B and BC850C, differing primarily in the guaranteed minimum DC current gain levels specified by the manufacturer's testing criteria.
Replacement Considerations
BC850B
FAQ
What is the maximum collector-emitter voltage for the BC850BW?
The maximum collector-emitter voltage (VCEO) is 45 V.
What is the minimum DC current gain specified for this device?
The minimum DC current gain (hFE) is 200, measured at 2 mA collector current and 5 V collector-emitter voltage.
Does the BC850BW support high-frequency operation?
Yes, it has a transition frequency (fT) of 300 MHz, making it suitable for general-purpose high-frequency applications.
