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The BC850BW,115 is a PNP general-purpose bipolar junction transistor manufactured by Nexperia. It is housed in the SOT-323 (SC-70) surface-mount package. The device features a maximum collector current of 100 mA and a collector-emitter voltage rating of 45 V. Key electrical parameters include a collector-base voltage of 50 V, an emitter-base voltage of 5 V, and a power dissipation capacity of 200 mW. The component exhibits a transition frequency of 100 MHz and a minimum DC current gain of 220 at specified test conditions.
Verify the specific suffix against official Nexperia documentation to confirm pinout orientation and gain binning. Confirm RoHS compliance status through the manufacturer's datasheet. Ensure the ordering part number matches the required current gain range for the intended circuit design.
Select this component for designs requiring a PNP transistor with moderate voltage ratings and high current gain. Compare specifications against complementary NPN types like the BC850C if symmetry is required. Evaluate thermal constraints due to the small package size and limited power dissipation rating.
This component belongs to Nexperia's BC85x series of small-signal transistors. These devices are widely used in consumer electronics and industrial equipment. The BC850BW variant specifically denotes a PNP type within the SC-70 package family, offering a compact solution for space-constrained printed circuit board layouts.
BC850CW,115
The maximum collector-emitter voltage (VCEO) is 45 V.
Yes, the BC850C is the NPN complement to the BC850 series.
The transition frequency (fT) is 100 MHz.