BC850BWH6327XTSA1

Overview

BC850BWH6327XTSA1 is an NPN silicon bipolar junction transistor (BJT) manufactured by Infineon Technologies. It is housed in a surface-mount SOT-23-3 package and designed for general-purpose amplification and switching applications. The device features a maximum collector-emitter voltage of 45 V, a continuous collector current of 100 mA, and a power dissipation rating of 330 mW. Key electrical characteristics include a DC current gain ranging from 200 to 450, a transition frequency of 250 MHz, and a collector-emitter saturation voltage of 200 mV at specified conditions. It operates within a temperature range of -65°C to +150°C.

Feature Summary

• NPN silicon construction optimized for low-voltage general-purpose signal processing
• High DC current gain ensuring effective amplification performance
• Wide operating temperature range supporting diverse environmental conditions
• Compact SOT-23-3 surface-mount footprint for space-constrained designs

Applications

• General-purpose amplification circuits
• Low-power switching applications
• Signal processing stages in consumer electronics

Procurement Notes

Verify the specific ordering suffix against official Infineon documentation to confirm package type and tape-and-reel specifications. Ensure compatibility with standard SMD assembly processes. Confirm RoHS compliance status through the manufacturer's latest datasheet or environmental declaration before integration into regulated products.

Selection Notes

Select this component when an NPN BJT with moderate voltage handling and high current gain is required in a small outline package. Consider the 45 V collector-emitter voltage limit and 100 mA current capacity during circuit design. Evaluate thermal management requirements given the 330 mW power dissipation rating in the SOT-23-3 package.

Part Context

The BC850 series represents Infineon's lineup of general-purpose NPN transistors. The WH6327 suffix typically denotes specific packaging and reel configurations used for automated surface-mount production. This part belongs to the broader category of small-signal bipolar junction transistors widely utilized in analog and digital logic interfacing tasks.

Replacement Considerations

Consult official cross-reference guides for verified substitutes. Generic replacements may differ in hFE binning, leakage currents, or thermal resistance. Verify pinout compatibility and electrical parameter margins before substituting.