SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The BC850C,235 is an NPN general purpose transistor manufactured by Nexperia in a small SOT23 surface-mounted device plastic package. It features a maximum collector current of 100 mA and a collector-emitter voltage of 45 V. The device offers a typical DC current gain (hFE) of 450 at IC = 10 µA and VCE = 5 V. Key electrical characteristics include a collector-base cut-off current of 15 nA, a transition frequency of 100 MHz, and a total power dissipation of 250 mW at Tamb ≤ 25 °C. The junction temperature range extends from -65 °C to +150 °C.
Verify the specific ordering suffix matches the required packaging configuration before procurement. Confirm that the component version aligns with non-automotive qualification requirements as specified in the product data sheet. Ensure design compliance with absolute maximum ratings to prevent permanent damage during operation or handling.
Select this component for applications requiring low current and low voltage NPN switching or amplification. Consider the SOT23 package dimensions for space-constrained designs. Evaluate thermal resistance characteristics relative to the intended PCB footprint and ambient operating conditions to ensure reliable performance within the specified temperature range.
The BC850C belongs to the Nexperia general purpose transistor family. It serves as the NPN complement to the BC860C PNP transistor. The device is housed in a standard SOT23 plastic package with three terminals. This specific part number indicates the standard production version suitable for general electronic applications outside of automotive environments.
The BC860C is documented as the PNP complement. Verify pinout compatibility and electrical specifications when substituting with other NPN transistors in the same package type.