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The BC850C_R1_00001 is a general-purpose NPN bipolar junction transistor manufactured by Panjit. It features a collector current of 100mA and a collector-emitter voltage rating of 45V. The device utilizes an epitaxial silicon planar design housed in a compact SOT-23 surface-mount package. It operates within a temperature range from -55°C to +150°C and has a maximum power dissipation of 330mW.
Verify the specific suffix R1_00001 against official Panjit documentation to confirm reel specifications and tape-and-reel dimensions. Ensure compatibility with automated pick-and-place equipment regarding the SOT-23 footprint. Cross-reference RoHS compliance status directly with the manufacturer's latest product declaration before integration into regulated supply chains.
Select this component when a small-signal NPN transistor with 45V breakdown and 100mA continuous current capability is required. The SOT-23 form factor makes it appropriate for high-density PCB layouts where space constraints limit the use of larger packages. Consider the 330mW thermal dissipation limit during circuit design to ensure operation remains within safe junction temperatures under expected load conditions.
This part belongs to the GPT-02TN series of general-purpose transistors from Panjit. It is functionally related to the BC850CT/R7 variant, sharing identical electrical characteristics and physical packaging. Both devices serve as standard discrete components for signal processing and power control tasks in consumer and industrial electronics.
BC850CT/R7