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The BC850CE6359HTMA1 is a PNP bipolar junction transistor from Infineon Technologies, housed in the SOT-323 surface-mount package. It features a collector-emitter voltage rating of -45 V and a continuous collector current capacity of 100 mA. The device operates within a junction temperature range of -55 °C to +150 °C and is characterized by a DC current gain (hFE) ranging from 110 to 220 at a collector current of -2 mA and VCE of -5 V. This component is designed for general-purpose switching and amplification applications requiring low power consumption.
Verify the complete ordering part number including suffixes against official Infineon documentation to ensure correct binning and tape-and-reel specifications. Confirm that the requested quantity matches standard packaging formats. Cross-reference the specific date code and lot traceability requirements with the supplier prior to finalizing procurement orders.
Select this component when a small-form-factor PNP transistor is required for low-current switching or amplification tasks. Ensure the design accounts for the -45 V maximum voltage rating and 100 mA current limit. Consider the thermal resistance characteristics if high ambient temperatures are expected in the application environment.
This transistor belongs to Infineon's portfolio of small-signal bipolar junction transistors optimized for surface-mount technology. The SOT-323 package provides a compact footprint ideal for modern electronic devices where board space is limited. It serves as a fundamental building block for analog and digital logic interfaces in various consumer and industrial products.
Consult official cross-reference lists for compatible alternatives. Verify pinout compatibility and electrical parameter equivalence before substituting.