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Product Detailed Parameters
- Description：TRANS NPN 45V 0.1A SOT23-3
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT),Bulk
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：45 V
- Vce Saturation (Max) @ Ib, Ic：600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max)：15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：420 @ 2mA, 5V
- Power - Max：225 mW
- Frequency - Transition：100MHz
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23-3 (TO-236)
- Grade：-
- Qualification：-
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Overview
The BC850CLT1 is an NPN silicon general-purpose transistor from the BC846ALT1 series, manufactured by onsemi. It features a collector-emitter voltage of 45 V and a continuous collector current of 100 mA. The device operates within a junction temperature range of -55°C to +150°C and offers a DC current gain (hFE) minimum of 420 at IC = 2.0 mA and VCE = 5.0 V. Packaged in SOT-23 (TO-236), it provides a transition frequency of 100 MHz and supports lead-free, halogen-free construction compliant with RoHS directives.
Feature Summary
- NPN epitaxial silicon planar design for general-purpose amplification
- High DC current gain suitable for low-current switching applications
- Lead-free packaging compliant with EU RoHS 2011/65/EU directives
Applications
- General purpose amplifier circuits
- Low-current switching applications
- Signal processing stages requiring high gain
Procurement Notes
Verify the specific suffix 'CLT1' against official onsemi documentation to confirm the exact hFE binning and package shipping configuration. Ensure compatibility with surface-mount assembly processes for the SOT-23 footprint. Confirm that the procurement channel sources genuine components directly from authorized distributors or the manufacturer to guarantee adherence to the specified electrical characteristics and environmental compliance standards.
Selection Notes
Select this component when a high-gain NPN transistor is required for small-signal amplification or switching tasks. The 45 V collector-emitter breakdown voltage defines its suitability for low-voltage logic interfaces. Verify that the application current remains below the 100 mA continuous limit and that thermal dissipation constraints are met within the SOT-23 package envelope for the intended operating environment.
Part Context
This part belongs to the BC846ALT1 series, which groups NPN transistors with varying voltage ratings and gain bins. The series includes variants such as BC846, BC847, BC848, BC849, and BC850, differentiated primarily by their collector-emitter voltage thresholds and DC current gain specifications. All share the same SOT-23 physical footprint and general operational principles.
Replacement Considerations
BC850BLT1
FAQ
What is the maximum collector-emitter voltage for the BC850CLT1?
The maximum collector-emitter voltage (VCEO) is 45 V.
What is the minimum DC current gain (hFE) specification?
The minimum DC current gain is 420, measured at IC = 2.0 mA and VCE = 5.0 V.
Is the BC850CLT1 compliant with environmental regulations?
Yes, the device is Pb-Free, Halogen Free/BFR Free, and RoHS Compliant.
