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Product Detailed Parameters
- Description：TRANS NPN 45V 0.1A SOT23-3
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：45 V
- Vce Saturation (Max) @ Ib, Ic：600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max)：15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：420 @ 2mA, 5V
- Power - Max：225 mW
- Frequency - Transition：100MHz
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23-3 (TO-236)
- Grade：-
- Qualification：-
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Overview
The BC850CLT1G is an NPN silicon general-purpose transistor from the BC846ALT1G series, manufactured by onsemi. It operates with a collector-emitter voltage of 45 V and a collector-base voltage of 50 V. The device supports a continuous collector current of 100 mA and dissipates up to 225 mW at 25°C. It features a DC current gain ranging from 290 to 520 at IC = 2.0 mA. The component is housed in a SOT-23 package (CASE 318) and functions within a junction temperature range of -55°C to +150°C.
Feature Summary
- Automotive-grade qualification compliant with AEC-Q101 standards and PPAP capability for unique site requirements.
- High DC current gain configuration suitable for low-current amplification applications.
- Lead-free construction that is halogen-free and RoHS compliant.
Applications
- General purpose amplifier circuits
- Switching applications requiring automotive reliability
- Low-voltage signal processing
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to confirm package type and shipping quantity. Confirm that the AEC-Q101 qualification status aligns with project requirements. Ensure the pinout style matches the design schematic before integration.
Selection Notes
Select this component when a high-gain NPN transistor is required for low-power switching or amplification. The 45 V rating distinguishes it from lower-voltage variants in the same family. Verify thermal dissipation limits relative to the PCB layout and ambient operating conditions.
Part Context
This part belongs to the BC846ALT1G series of NPN silicon transistors. It shares the same physical package and basic electrical structure as other members of the series but is differentiated by its specific breakdown voltage and gain binning characteristics defined by the 'C' suffix.
Replacement Considerations
BC850BLT1G offers similar functionality with different gain specifications. BC847CLT1G provides higher voltage ratings but may require circuit adjustment due to parameter differences.
