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Product Detailed Parameters
- Description：TRANS NPN 45V 0.1A SOT-23-3
- Series：-
- Mfr：onsemi
- Package：Bulk
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：45 V
- Vce Saturation (Max) @ Ib, Ic：600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max)：15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：420 @ 2mA, 5V
- Power - Max：310 mW
- Frequency - Transition：300MHz
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23-3
- Grade：-
- Qualification：-
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Overview
The BC850CMTF is a single NPN silicon epitaxial planar transistor manufactured by onsemi. It operates with a maximum collector current of 100 mA and a collector-emitter breakdown voltage of 45 V. The device features a transition frequency of 300 MHz and a maximum power dissipation of 310 mW. DC current gain (hFE) is specified at a minimum of 420 under test conditions of 2 mA collector current and 5 V collector-emitter voltage. The component is housed in a surface-mount SOT-23-3 package and supports a maximum junction temperature of 150°C.
Feature Summary
- NPN epitaxial silicon planar design for general-purpose amplification
- High DC current gain capability for signal processing applications
- Surface-mount construction in a compact three-terminal package
Applications
- General purpose amplifier circuits
- Signal switching applications
- Low voltage logic interfacing
Procurement Notes
Verify the specific suffix CMTF against the manufacturer's official datasheet to confirm pinout orientation and electrical tolerances. Ensure the procurement source provides documentation confirming RoHS3 compliance and REACH status as stated in the product specifications. Cross-reference the ordering part number with the manufacturer's current production status to avoid obsolete stock.
Selection Notes
Select this component when a small-signal NPN transistor with moderate voltage handling and high gain is required in a compact footprint. The 45 V rating suits low-voltage logic systems, while the 100 mA limit defines its current capacity. Compare the 300 MHz transition frequency against circuit bandwidth requirements to ensure adequate performance for the intended signal frequencies.
Part Context
This device belongs to the BC850 series of NPN general-purpose transistors produced by onsemi. The series utilizes an epitaxial silicon planar process designed for reliability in consumer and industrial electronics. The BC850CMTF variant specifically denotes the SOT-23-3 surface-mount configuration within this family.
Replacement Considerations
BC850CT/R7
FAQ
What is the maximum collector-emitter voltage for the BC850CMTF?
The maximum collector-emitter breakdown voltage (Vceo) is 45 V.
What is the minimum DC current gain specified for this transistor?
The minimum DC current gain (hFE) is 420, measured at a collector current of 2 mA and a collector-emitter voltage of 5 V.
Does the BC850CMTF support high-frequency operation?
Yes, the device has a transition frequency (fT) of 300 MHz, suitable for RF and high-speed switching applications.
