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The BC856A-QR is a PNP general-purpose bipolar junction transistor manufactured by Nexperia USA Inc. It operates with a maximum collector-emitter voltage of 65 V and a continuous collector current of 100 mA. The device features a DC current gain (hFE) ranging from 220 to 475 at 2 mA and 5 V. It is housed in a TO-236AB (SOT23) surface-mount package with a power dissipation of 250 mW. The component meets AEC-Q101 automotive qualification standards and supports an operating temperature range from -65°C to +150°C.
Verify the specific suffix QR indicates reel packaging configuration when sourcing. Confirm AEC-Q101 qualification status matches project requirements. Ensure the TO-236AB package footprint aligns with PCB layout specifications. Cross-reference datasheet revisions for any parameter updates prior to final design approval.
Select this component for designs requiring high gain PNP transistors in small form factors. The AEC-Q101 certification makes it suitable for automotive systems where reliability is critical. Compare hFE ranges against other BC856 variants if tighter gain tolerances are needed. Consider thermal management constraints due to the 250 mW power dissipation limit in enclosed spaces.
This part belongs to the BC856 family of PNP general-purpose transistors, complementing the BC846 NPN series. It shares similar electrical characteristics with standard BC856 devices but includes specific packaging and qualification attributes defined by the manufacturer. The family is widely used in consumer and industrial electronics for basic signal processing tasks.
BC856B-QR offers higher minimum gain. BC856C-QR provides even higher gain options. Standard BC856A without the Q-R suffix lacks automotive qualification. BC856BW uses a smaller SOT-323 package.