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The BC856A,215 is a PNP general-purpose transistor manufactured by Nexperia USA Inc. It features a maximum collector-emitter voltage of 65 V and a continuous collector current of 100 mA. The device operates with a DC current gain (hFE) of at least 125 when tested at Ic=2mA and Vce=5V. It has a transition frequency of 100 MHz and a maximum power dissipation of 200 mW. The saturation voltage is 600 mV at Ic=100mA and Ib=5mA. The component is housed in an SOT-323 surface-mount package and supports a junction temperature up to 150°C.
Verify the specific suffix '215' against official Nexperia documentation to confirm reel size or tape-and-reel specifications. Ensure the ordering part number matches the required packaging format for automated assembly processes. Confirm RoHS compliance status through the manufacturer's latest product change notification records before final procurement approval.
Select this component for designs requiring a compact PNP transistor with moderate voltage ratings. The SOT-323 package offers space efficiency compared to larger through-hole alternatives. Verify that the 100 mA current limit and 65 V breakdown voltage align with the circuit's operational requirements and thermal management capabilities.
This part belongs to the BC856 series of PNP general-purpose transistors from Nexperia. The series includes variants such as BC856B and BC856C, which differ primarily in their DC current gain ranges. The BC856A variant provides a specific gain binning suitable for standard amplification tasks within the broader family of low-power switching devices.
BC856AW,115
The maximum collector-emitter voltage (Vceo) is 65 V.
It uses the SOT-323 (SC-70) surface-mount plastic package.
The minimum DC current gain (hFE) is 125 at Ic=2mA and Vce=5V.