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Product Detailed Parameters
- Description：TRANS PNP 65V 0.1A UDFN14123/SWP
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Transistor Type：PNP
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：65 V
- Vce Saturation (Max) @ Ib, Ic：650mV @ 5mA, 100mA
- Current - Collector Cutoff (Max)：15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：125 @ 2mA, 5V
- Power - Max：450 mW
- Frequency - Transition：100MHz
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount, Wettable Flank
- Package / Case：3-UDFN
- Supplier Device Package：U-DFN1412-3/SWP (Type A)
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The BC856AFSWQ-7 is a PNP bipolar junction transistor manufactured by Diodes Incorporated. It features a dual configuration housed in an SOT-363 surface-mount package. The device supports a maximum DC collector current of 100 mA and a collector-emitter voltage (Vceo) of 65 V. Additional electrical ratings include a collector-base voltage of 80 V, an emitter-base voltage of 5 V, and a power dissipation capacity of 200 mW. The component utilizes silicon technology and is designed for general-purpose switching and amplification applications within specified thermal limits.
Feature Summary
- Dual PNP transistor configuration integrated into a single compact surface-mount package
- High breakdown voltage rating suitable for general-purpose signal processing
- Optimized for low-power consumption with defined saturation characteristics
Applications
- General-purpose switching circuits
- Signal amplification stages
- Logic level translation interfaces
Procurement Notes
Verify the specific suffix 'FSWQ' against the manufacturer's official datasheet to confirm automotive qualification status or specific binning requirements. Ensure the ordering part number matches the exact package and marking specifications required for your assembly process. Cross-reference the RoHS compliance status with the latest product change notices provided by Diodes Incorporated prior to final procurement.
Selection Notes
Select this component when a dual PNP configuration is required in a minimal footprint. Compare the 65 V collector-emitter voltage and 100 mA current limits against circuit demands. Evaluate the SOT-363 package thermal resistance against the expected power dissipation. Confirm that the gain bandwidth product meets the frequency requirements of the intended application compared to alternative single transistors.
Part Context
This component belongs to the BC856 series of small-signal PNP transistors produced by Diodes Incorporated. The series is widely utilized in consumer electronics and industrial control systems. The specific variant integrates two matched PNP transistors to save board space. It serves as a standard replacement for legacy discrete PNP devices in modern surface-mount designs requiring reliable performance.
Replacement Considerations
Check for direct equivalents such as the BC856ASW-7 or BC856BSW-7 from Diodes Incorporated. Verify pinout compatibility and electrical parameter overlaps before substituting. Ensure any alternative maintains the same SOT-363 package dimensions.
