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Product Detailed Parameters
- Description：TRANS PNP 65V 100MA SOT23
- Series：*
- Mfr：onsemi
- Package：Cut Tape (CT),Bulk
- Transistor Type：-
- Current - Collector (Ic) (Max)：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Vce Saturation (Max) @ Ib, Ic：-
- Current - Collector Cutoff (Max)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：-
- Power - Max：-
- Frequency - Transition：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
Download product information
Overview
The BC856ALT1G is a PNP silicon general-purpose transistor from the onsemi BC856ALT1G series, housed in an SOT-23 (TO-236) package. It features a collector-emitter voltage of -65 V and a continuous collector current of -100 mA. The device offers a DC current gain ranging from 125 to 250 at specific test conditions. Thermal characteristics include a total power dissipation of 225 mW on an FR-5 board and a junction-to-ambient thermal resistance of 556 °C/W. Operating and storage temperatures range from -55°C to +150°C.
Feature Summary
- PNP epitaxial silicon planar design for general-purpose amplification
- AEC-Q101 qualified with PPAP capability for automotive applications
- Lead-free, halogen-free, and bromine-free construction compliant with RoHS standards
Applications
- General purpose amplifier circuits
- Automotive electronic systems requiring unique site control
- Switching applications within specified safe operating areas
Procurement Notes
Verify the complete part number includes the 'G' suffix to confirm lead-free compliance. Confirm the prefix 'S' or 'NSV' if automotive qualification and PPAP documentation are required. Check the specific marking code against the ordering information table to ensure correct hFE binning and voltage rating alignment with circuit requirements.
Selection Notes
Select this component based on the required collector-emitter breakdown voltage and maximum continuous current limits. Ensure the application operates within the defined safe operating area curves to prevent secondary breakdown. Verify that the base current drive capabilities align with the saturation voltage specifications for efficient switching performance.
Part Context
This device belongs to the BC856ALT1G series manufactured by onsemi. It is designed as a complementary device to NPN transistors such as the BC846 series. The product utilizes a plastic encapsulate in a surface-mount SOT-23 case, suitable for automated assembly processes in consumer and industrial electronics.
Replacement Considerations
Direct substitutes include BC856ALT3G and SBC856ALT1G. Cross-manufacturer equivalents like LBC856ALT1G share similar electrical parameters but require verification of pinout compatibility and thermal resistance values.
