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The BC856ALT1G is a PNP silicon general-purpose transistor from the onsemi BC856ALT1G Series, housed in an SOT-23 (TO-236) surface-mount package. It features a collector-emitter voltage of -65 V and a continuous collector current of -100 mA dc. The device operates within a junction temperature range of -55°C to +150°C with a total device dissipation of 225 mW on an FR-5 board. It meets AEC-Q101 qualification standards for automotive applications requiring unique site and control change requirements.
Verify the specific ordering suffix and prefix against official documentation to confirm package type and shipping configuration. Ensure the component meets all required environmental and quality standards for the intended application before procurement.
Select this component for designs requiring a PNP general-purpose transistor with AEC-Q101 qualification. Confirm that the -65 V collector-emitter voltage and -100 mA current ratings align with circuit requirements. Verify thermal management capabilities based on the specified power dissipation limits.
This part belongs to the BC856ALT1G Series of PNP silicon general-purpose transistors manufactured by onsemi. The series includes variants with different DC current gain ranges, such as BC856BLT1G, which are housed in the same SOT-23 package family.
BC856BLT1G
The maximum collector-emitter voltage (VCEO) for the BC856ALT1G is -65 V.
Yes, devices with the S and NSV prefix are AEC-Q101 qualified and PPAP capable for automotive and other applications requiring unique site and control change requirements.
The BC856ALT1G is available in an SOT-23 (TO-236) surface-mount package.