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The BC856AMTF is a PNP epitaxial silicon transistor manufactured by onsemi, housed in an SOT-23 surface-mount package. It features a collector-emitter voltage of -65 V and a continuous collector current rating of -100 mA. The device provides a DC current gain (hFE) range of 110 to 220 at a collector current of -2 mA. Key electrical characteristics include a collector-base voltage of -80 V, emitter-base voltage of -5 V, and a maximum power dissipation of 310 mW. The component operates within a junction temperature range up to 150 °C.
Verify the manufacturer source carefully, as this part was originally produced by Fairchild Semiconductor before its acquisition by onsemi. Confirm that the ordering suffix 'M' indicates the matte finish package type and 'TF' denotes tape and reel packaging. Ensure the hFE classification matches the required 'A' binning specifications for your design constraints.
Select this component when a low-voltage PNP transistor with moderate current handling is required. The BC856AMTF offers a specific hFE binning of 110 to 220, which differs from other variants like the BC856B or BC856C. Consider the SOT-23 footprint for space-constrained designs requiring standard surface-mount assembly techniques.
This device belongs to the BC856-BC860 family of PNP epitaxial silicon transistors. The family includes various voltage ratings and hFE classifications, such as the BC857 and BC858. The BC856 specifically targets applications requiring higher voltage tolerance compared to lower-rated counterparts while maintaining compatibility with standard small-signal transistor footprints.
Direct substitutes within the same family include BC856BMTF and BC856CMTF, which share identical electrical ratings but differ in DC current gain bins.