BC856AMTF

BC856AMTF

  • Description:TRANS PNP 65V 0.1A SOT-23-3
  • Series:-

SKU:30ddaa0b9f93 Category: Brand:

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Product Detailed Parameters

  • Description:TRANS PNP 65V 0.1A SOT-23-3
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR)
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):65 V
  • Vce Saturation (Max) @ Ib, Ic:650mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max):15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:110 @ 2mA, 5V
  • Power - Max:310 mW
  • Frequency - Transition:150MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SOT-23-3
  • Grade:-
  • Qualification:-

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BC856AMTF

Overview

The BC856AMTF is a PNP epitaxial silicon transistor manufactured by onsemi, housed in an SOT-23 surface-mount package. It features a collector-emitter voltage of -65 V and a continuous collector current rating of -100 mA. The device provides a DC current gain (hFE) range of 110 to 220 at a collector current of -2 mA. Key electrical characteristics include a collector-base voltage of -80 V, emitter-base voltage of -5 V, and a maximum power dissipation of 310 mW. The component operates within a junction temperature range up to 150 °C.

Feature Summary

  • Designed for general-purpose switching and amplifier applications
  • Suitable for automatic insertion in thick and thin-film circuits
  • Complements the BC846 series NPN transistors

Applications

  • General-purpose switching
  • Amplifier applications
  • Thick and thin-film circuit integration

Procurement Notes

Verify the manufacturer source carefully, as this part was originally produced by Fairchild Semiconductor before its acquisition by onsemi. Confirm that the ordering suffix 'M' indicates the matte finish package type and 'TF' denotes tape and reel packaging. Ensure the hFE classification matches the required 'A' binning specifications for your design constraints.

Selection Notes

Select this component when a low-voltage PNP transistor with moderate current handling is required. The BC856AMTF offers a specific hFE binning of 110 to 220, which differs from other variants like the BC856B or BC856C. Consider the SOT-23 footprint for space-constrained designs requiring standard surface-mount assembly techniques.

Part Context

This device belongs to the BC856-BC860 family of PNP epitaxial silicon transistors. The family includes various voltage ratings and hFE classifications, such as the BC857 and BC858. The BC856 specifically targets applications requiring higher voltage tolerance compared to lower-rated counterparts while maintaining compatibility with standard small-signal transistor footprints.

Replacement Considerations

Direct substitutes within the same family include BC856BMTF and BC856CMTF, which share identical electrical ratings but differ in DC current gain bins.

BC856AMTFBC856AMTF

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