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The BC856AW,115 is a single PNP general-purpose bipolar junction transistor manufactured by Nexperia. It utilizes silicon technology and is housed in an SOT-323 (SC-70) surface-mount package. The device supports a maximum continuous collector current of 100 mA and a collector-emitter voltage of 65 V. Key electrical characteristics include a minimum DC current gain (hFE) of 125 at 2 mA and 5 V, a transition frequency of 100 MHz, and a power dissipation rating of 200 mW. It operates within a temperature range of -65 °C to +150 °C.
Verify the specific suffix '115' corresponds to the tape-and-reel packaging format required for your assembly line. Confirm that the SOT-323 footprint matches your PCB layout constraints. Ensure the component meets RoHS3 compliance standards if mandated by your regional regulations. Cross-reference the manufacturer part number with distributor listings to confirm active status and availability.
Select this component when a low-voltage PNP transistor is needed in a minimal footprint. The 65 V rating distinguishes it from lower-voltage variants like the BC857 series. The specified hFE range ensures adequate gain for standard analog and digital switching duties without requiring complex biasing networks.
This component belongs to the BC856 family of general-purpose PNP transistors. It serves as the PNP complement to the BC846 NPN series. The 'AW' designation indicates the specific gain binning, while ',115' denotes the standard reel packaging. It is widely used in portable devices due to its small size and robust performance characteristics.
BC856W,115: Same family member with identical electrical specifications but potentially different gain binning or packaging details.
The maximum collector-emitter voltage (VCEO) is 65 V.
It uses the SOT-323 (also known as SC-70) surface-mount package.
The BC856AW,115 is a PNP transistor.