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The BC856AW,135 is a PNP general-purpose bipolar junction transistor manufactured by Nexperia. It operates with a maximum collector current of 100 mA and a collector-emitter voltage of 45 V. The device features a transition frequency of 100 MHz and a power dissipation rating of 200 mW. It utilizes an SOT-323 surface-mount package. The component supports a maximum operating temperature of +150°C and includes a DC current gain (hFE) range of 125 to 475.
Verify the specific suffix '135' against official Nexperia documentation to confirm reel packaging specifications. Ensure the selected variant matches the required 45 V collector-emitter voltage rating for the target application. Cross-reference the hFE binning requirements with the datasheet to guarantee performance consistency in production environments.
Select this component when a compact PNP transistor is required for low-current switching tasks. The SOT-323 package offers space efficiency for dense PCB layouts. Consider the 45 V voltage limit and 100 mA current capacity during circuit design to ensure operation remains within safe limits under all expected load conditions.
This part belongs to the BC856 series of PNP transistors from Nexperia. It serves as the complement to the BC846 NPN series. The device is designed for general-purpose use in consumer and industrial electronics. It provides a reliable solution for signal processing and control functions requiring small form factors.
BC856BW,135
The maximum collector-emitter voltage (VCEO) is 45 V.
Yes, the maximum operating junction temperature is specified at +150°C.
The device is housed in an SOT-323 surface-mount package.