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The BC856B-AU_R1_000A1 is a PNP general-purpose bipolar junction transistor manufactured by Panjit International Inc. It utilizes silicon technology and is housed in an SOT-23 surface-mount package. The device features a maximum collector-emitter voltage (VCEO) of 65 V, a collector-base voltage (VCBO) of 80 V, and an emitter-base voltage (VEBO) of 6 V. It supports a maximum DC collector current of 100 mA with a power dissipation rating of 250 mW. Key electrical characteristics include a collector-emitter saturation voltage of 650 mV and a gain-bandwidth product (fT) of 200 MHz. It operates within a temperature range of -55°C to +150°C and holds AEC-Q101 qualification.
Verify the specific suffix AU_R1_000A1 against official Panjit documentation to confirm packaging and tape-and-reel specifications. Ensure compatibility with SOT-23 footprint requirements during PCB layout. Confirm AEC-Q101 certification status if deploying in regulated automotive environments. Cross-reference datasheet revisions to validate thermal and electrical parameters before final integration.
Select this component when a PNP transistor with 65 V collector-emitter voltage and 100 mA continuous current capability is required. The SOT-23 package suits space-constrained designs. Consider the 200 MHz transition frequency for moderate-speed switching tasks. Verify that the 250 mW power dissipation limit aligns with the thermal management strategy of the target application circuit.
This part belongs to Panjit's lineup of surface-mount bipolar junction transistors. The BC856B designation indicates a specific current gain binning within the PNP family. The AU_R1_000A1 suffix denotes specific manufacturing and packaging details defined by the supplier. It serves as a discrete active component for analog and digital logic interfacing.
Consult official Panjit substitution guides for verified equivalents. Generic replacements must match the SOT-23 package, PNP polarity, and minimum 65 V VCEO rating. Verify that alternative parts meet or exceed the 100 mA IC and 200 MHz fT specifications.