BC856B/DG/B3,235

Description：TRANS PNP 65V 0.1A TO-236AB
Series：-

SKU:cb46aaca0ef8 Category: Single Bipolar Transistors Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：TRANS PNP 65V 0.1A TO-236AB
Series：-
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR)
Transistor Type：PNP
Current - Collector (Ic) (Max)：100 mA
Voltage - Collector Emitter Breakdown (Max)：65 V
Vce Saturation (Max) @ Ib, Ic：650mV @ 5mA, 100mA
Current - Collector Cutoff (Max)：15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：125 @ 2mA, 5V
Power - Max：250 mW
Frequency - Transition：100MHz
Operating Temperature：150°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-236-3, SC-59, SOT-23-3
Supplier Device Package：TO-236AB
Grade：-
Qualification：-

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BC856B/DG/B3,235

Overview

The BC856B/DG/B3,235 is a PNP general-purpose transistor manufactured by Nexperia USA Inc. It utilizes the SOT-416 (SC-74) surface-mount package with three pins. Key electrical parameters include a maximum collector-emitter voltage of -65 V and a collector-base voltage of -80 V. The device supports a continuous collector current of -100 mA and operates within a temperature range of -65°C to +150°C. It features a minimum DC current gain (hFE) of 125 at specified test conditions.

Feature Summary

General-purpose switching and amplification capabilities in a compact surface-mount plastic package
High thermal stability allowing operation up to 150°C junction temperature
Low saturation voltage characteristics for efficient power handling

Applications

General-purpose switching circuits
Amplifier stages
Logic level translation

Procurement Notes

Verify the specific suffix 'DG' against official Nexperia documentation to confirm pinout configuration and exact electrical tolerances. Ensure the ordering code matches the required gain binning. Confirm RoHS compliance status through the manufacturer's latest datasheet before finalizing procurement specifications.

Selection Notes

Select this component for designs requiring a PNP transistor in an SC-74 package. Compare hFE ranges against circuit requirements. Verify that the -65V rating exceeds the maximum expected collector-emitter voltage in the application. Consider thermal dissipation limits when determining heat sinking needs.

Part Context

This part belongs to the BC856 series of PNP transistors from Nexperia. It serves as the complement to NPN devices like the BC846. The series is designed for low-voltage, low-current applications where space constraints necessitate small surface-mount packages such as SOT-416.

Replacement Considerations

BC856BT,115

FAQ

What is the maximum collector-emitter voltage for this device?

The maximum collector-emitter voltage (VCEO) is -65 V.

Does this transistor support automotive applications?

Standard BC856B variants are not automatically AEC-Q101 qualified; verify if the specific 'DG' suffix denotes an automotive-grade variant via the official datasheet.