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Product Detailed Parameters
- Description：TRANS PNP 65V 0.1A UDFN14123/SWP
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Transistor Type：PNP
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：65 V
- Vce Saturation (Max) @ Ib, Ic：650mV @ 5mA, 100mA
- Current - Collector Cutoff (Max)：15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：220 @ 2mA, 5V
- Power - Max：450 mW
- Frequency - Transition：100MHz
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount, Wettable Flank
- Package / Case：3-UDFN
- Supplier Device Package：U-DFN1412-3/SWP (Type A)
- Grade：-
- Qualification：-
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Overview
The BC856BFSW-7 is a single PNP bipolar junction transistor manufactured by Diodes Incorporated. It utilizes silicon technology and features a U-DFN1412-3/SWP surface-mount package with wettable flank capability. The device supports a maximum collector-emitter voltage of 65 V and a continuous collector current of 100 mA. Key electrical characteristics include a power dissipation rating of 450 mW, a gain bandwidth product (fT) of 100 MHz, an emitter-base voltage of 6 V, and a collector-emitter saturation voltage of 300 mV.
Feature Summary
- Features wettable flank construction for enhanced automated optical inspection reliability
- Provides high continuous collector current capability within a low-profile surface-mount footprint
- Utilizes silicon planar epitaxial technology for stable switching performance
Applications
- General-purpose signal switching circuits
- Low-voltage amplifier stages
- Logic level translation interfaces
- Driver circuits for small-signal loads
Procurement Notes
Verify the specific suffix SWP to confirm the U-DFN1412-3 package type and wettable flank specification. Ensure procurement channels provide official datasheets confirming the 65V rating and 100mA current limits. Cross-reference RoHS compliance status with the manufacturer's latest environmental declarations prior to finalizing component selection.
Selection Notes
Select this component when a compact PNP switch is required with verified solder joint inspectability via wettable flanks. Compare against standard DFN packages if visual inspection is critical. Confirm that the 100MHz transition frequency meets the application's speed requirements and that the 450mW thermal dissipation fits the board layout constraints.
Part Context
This part belongs to the BC856 series of general-purpose PNP transistors from Diodes Incorporated. It shares functional similarities with other members like the BC856AW but differs in physical packaging and thermal handling capabilities. The series is designed for cost-effective mass production in consumer electronics and portable devices requiring reliable surface-mount assembly.
Replacement Considerations
Direct substitutes include the BC856BFHWQ which offers similar electrical ratings but utilizes a U-DFN1110A-3 package. Verify pinout compatibility and thermal pad dimensions before substitution. Other generic PNP transistors may match electrical specs but lack the specific wettable flank manufacturing process.
