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Product Detailed Parameters
- Description：TRANS PNP 65V 100MA SOT23
- Series：*
- Mfr：onsemi
- Package：Cut Tape (CT),Bulk
- Transistor Type：-
- Current - Collector (Ic) (Max)：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Vce Saturation (Max) @ Ib, Ic：-
- Current - Collector Cutoff (Max)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：-
- Power - Max：-
- Frequency - Transition：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
Download product information
Overview
The BC856BLT1G is a PNP silicon general-purpose transistor from the onsemi BC856ALT1G series, housed in an SOT-23 (TO-236AB) plastic package. It features a collector-emitter voltage of -65 V and a continuous collector current of -100 mA. The device offers a DC current gain range of 90 to 475 at specific test conditions. Thermal characteristics include a total device dissipation of 225 mW on an FR-5 board and a junction-to-ambient thermal resistance of 556 °C/W. Operating temperatures span from -55°C to +150°C.
Feature Summary
- PNP epitaxial silicon planar design for general-purpose switching and amplification
- Low current and low voltage specifications suitable for small signal applications
- Surface-mounted device construction in a compact SOT-23 plastic package
Applications
- General-purpose switching circuits
- Small-signal amplifier stages
- Driver applications requiring low power consumption
Procurement Notes
Verify the complete part number includes the 'G' suffix for Pb-free compliance and RoHS conformity. Confirm the prefix matches the required manufacturing site or automotive qualification standards if applicable. Ensure the tape and reel quantity aligns with production requirements. Cross-reference the marking code '3B' with the datasheet to validate authenticity upon receipt.
Selection Notes
Select this component when a PNP transistor with a -65 V collector-emitter breakdown is required. The BC856B variant provides a moderate current gain range compared to higher-gain alternatives like the BC857 or BC858 series. Consider the SOT-23 footprint constraints and the 225 mW power dissipation limit under standard ambient conditions during circuit design.
Part Context
This device belongs to the BC856ALT1G family, which includes variants with different current gain bins (A, B, C). The BC856B specifically denotes the middle gain bin within the BC856 voltage rating group. It serves as the PNP complement to the BC846B NPN transistor in matched pairs or complementary circuits.
Replacement Considerations
Direct substitutes include other manufacturers' BC856B parts in SOT-23 packages. Verify pinout compatibility, as SOT-23 styles vary. Check that replacement devices meet the -65 V VCEO and -100 mA IC requirements.
