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The BC856BLT1G is a PNP silicon general-purpose transistor manufactured by onsemi. It operates with a maximum collector-emitter voltage of -65 V and a collector-base voltage of -80 V. The device supports a continuous collector current of -100 mA and a peak current of -200 mA. Total device dissipation is rated at 225 mW on an FR-5 board, with a junction-to-ambient thermal resistance of 556 °C/W. The transition frequency (fT) is 100 MHz. Operating and storage temperatures range from -55°C to +150°C.
Verify the specific suffix 'BL' against the official datasheet ordering information to confirm the DC current gain binning. Ensure the package style matches the required pinout configuration for the target circuit design. Confirm that the Pb-Free marking aligns with environmental compliance requirements for the final assembly process.
Select this component when a PNP small-signal transistor with a -65 V collector-emitter breakdown voltage is required. The -100 mA continuous current rating suits low-power signal processing tasks. Verify that the minimum hFE of 220 meets the biasing requirements of the intended application circuit compared to other gain grades in the series.
This part belongs to the BC856ALT1G Series, which includes variants with different voltage ratings such as BC857 and BC858. The 'BL' designation specifically identifies the DC current gain characteristics within this family. The NPN complement for this device is the BC846 series.
Direct substitutes include BC856B from other manufacturers. Cross-reference pinouts and electrical limits before substitution.