ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：TRANS PNP 65V 0.1A SOT23-3
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：PNP
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：65 V
- Vce Saturation (Max) @ Ib, Ic：650mV @ 5mA, 100mA
- Current - Collector Cutoff (Max)：15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：220 @ 2mA, 5V
- Power - Max：300 mW
- Frequency - Transition：100MHz
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23-3 (TO-236)
- Grade：-
- Qualification：-
Download product information
Overview
The BC856BLT3G is a PNP silicon general-purpose transistor manufactured by onsemi in an SOT-23 (TO-236) surface-mount package. It features a collector-emitter voltage rating of -65 V and a continuous collector current capacity of -100 mA. The device offers a DC current gain range of 90 to 250 at a collector current of -10 mA. Thermal characteristics include a total device dissipation of 225 mW on an FR-5 board and a junction-to-ambient thermal resistance of 556 °C/W. The component operates within a junction and storage temperature range of -55°C to +150°C.
Feature Summary
- PNP epitaxial silicon planar design optimized for low current and low voltage applications
- Complementary NPN devices available within the BC846 series
- Manufactured in a compact SOT-23 plastic package suitable for automated insertion
Applications
- General purpose switching circuits
- Audio frequency (AF) amplifier stages
- Driver applications requiring low saturation voltage
Procurement Notes
Verify that the ordering suffix LT3G corresponds to the specific tape and reel packaging quantity of 10,000 units as documented in the official onsemi datasheet. Confirm compliance with RoHS directives and Pb-free status requirements for your assembly process. Ensure the application environment remains within the specified thermal limits to maintain reliability.
Selection Notes
Select this component when a PNP small-signal transistor with a -65 V collector-emitter breakdown voltage is required. The BC856B grade provides a defined hFE range of 90 to 250, distinguishing it from higher gain variants like the BC857 or BC858. Consider the SOT-23 footprint constraints and the 225 mW power dissipation limit under standard ambient conditions.
Part Context
This part belongs to the BC856ALT1G Series, which includes complementary NPN transistors such as the BC846. The series is designed for general-purpose amplification and switching. The BC856 variant specifically targets applications requiring higher voltage tolerance compared to the BC857 (-45 V) and BC858 (-30 V) counterparts within the same family.
Replacement Considerations
Direct functional substitutes include the BC856B from other manufacturers such as NXP or Diodes Incorporated, provided they adhere to the SOT-23 package and electrical specifications. Verify pinout compatibility and thermal resistance values before substitution.
