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The BC856BM3T5G is a single PNP bipolar junction transistor manufactured by onsemi, designed for surface-mount applications in the SOT-723 package. It features a maximum collector current of 100 mA and a collector-emitter voltage rating of 65 V. The device exhibits a transition frequency of 100 MHz and a power dissipation capacity of 265 mW. Key electrical parameters include a collector-base voltage of 80 V, an emitter-base voltage of 5 V, and a saturation voltage of 650 mV at specified test conditions. The component operates within a temperature range of -55°C to +150°C.
Verify the specific suffix T5G against the manufacturer's official datasheet to confirm packaging details and reel specifications. Ensure the ordering part number matches the exact pinout and electrical characteristics required for the design. Cross-reference the RoHS compliance status and material declaration documents provided by onsemi prior to final procurement authorization.
Select this component when a compact PNP transistor with moderate voltage ratings and high current gain is required. The SOT-723 package offers space savings compared to larger through-hole alternatives. Consider the 100 mA continuous current limit and 265 mW power dissipation constraints during thermal analysis. Verify compatibility with existing PCB footprints and assembly processes before integration into the schematic.
This device belongs to the BC856 series of small-signal transistors from onsemi. It serves as a standard replacement for legacy PNP components in consumer electronics and industrial control modules. The SOT-723 package variant provides enhanced miniaturization while maintaining reliable electrical performance for mass-produced electronic assemblies requiring consistent switching characteristics.
Direct substitutes include BC856B variants from other manufacturers such as Nexperia or NXP, provided they match the SOT-723 package and electrical ratings. Verify pinout compatibility and thermal resistance values before substitution. Generic replacements must meet the same 65 V collector-emitter voltage and 100 mA current specifications.