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Product Detailed Parameters
- Description：TRANS PNP 65V 0.1A SOT-23-3
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：PNP
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：65 V
- Vce Saturation (Max) @ Ib, Ic：650mV @ 5mA, 100mA
- Current - Collector Cutoff (Max)：15nA
- DC Current Gain (hFE) (Min) @ Ic, Vce：220 @ 2mA, 5V
- Power - Max：310 mW
- Frequency - Transition：200MHz
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23-3
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The BC856BQ-7-F is a PNP small-signal transistor manufactured by Diodes Incorporated, housed in an SOT23 surface-mount package. It features a collector-emitter voltage of -65 V and a continuous collector current of -100 mA. The device supports a power dissipation of 310 mW at +25°C and operates within a temperature range of -65°C to +150°C. Electrical characteristics include a DC current gain (hFE) ranging from 220 to 475 at -2.0 mA, a transition frequency of 100 MHz, and a collector-emitter saturation voltage of -300 mV under specified conditions.
Feature Summary
- Totally lead-free and fully RoHS compliant with halogen and antimony-free green construction.
- AEC-Q101 qualified for automotive applications requiring specific change control.
- Ideally suited for automatic insertion into manufacturing processes.
- Complementary to the BC846–BC848 NPN transistor family.
Applications
- Switching circuits
- Audio Frequency (AF) amplifier applications
Procurement Notes
Verify that the ordering suffix '-7-F' corresponds to the 3,000-unit reel packaging configuration. Confirm the manufacturer is Diodes Incorporated and check for AEC-Q101 qualification if automotive compliance is required. Ensure the component marking matches 'K3B' as specified in the official documentation.
Selection Notes
Select this component when a PNP transistor with a -65 V collector-emitter breakdown voltage is required. Consider the BC856BQ-7-F for designs needing high DC current gain up to 475 and low saturation voltage. Verify thermal management requirements against the 310 mW dissipation limit in the SOT23 package.
Part Context
This part belongs to the BC856AQ–BC857BQ series of PNP small-signal transistors designed for general-purpose switching and amplification. The series includes complementary NPN types from the BC846–BC848 family. The BC856BQ variant specifically offers higher current gain compared to the BC856AQ version.
Replacement Considerations
BC856AQ-7-F
FAQ
What is the maximum collector-emitter voltage for the BC856BQ-7-F?
The maximum collector-emitter voltage (VCEO) is -65 V.
Is the BC856BQ-7-F suitable for automotive applications?
Yes, it is AEC-Q101 qualified and PPAP capable for automotive applications requiring specific change control.
What is the typical DC current gain range for this transistor?
The DC current gain (hFE) ranges from 220 to 475 when measured at IC = -2.0 mA and VCE = -5 V.
