SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The BC856BQBZ is a PNP general-purpose transistor manufactured by Nexperia. It operates with a maximum collector-emitter voltage of 45 V and a maximum collector current of 100 mA. The device utilizes silicon technology and is housed in a DFN1110D-3 (SOT8015) leadless surface-mount package. Key electrical characteristics include a collector-base voltage of 45 V, an emitter-base voltage of 5 V, and a DC current gain (hFE) ranging from 200 to 450 at 2 mA and 5 V. The component supports a maximum power dissipation of 200 mW and functions within a temperature range of -55°C to +150°C.
Verify the specific suffix 'QBZ' against official Nexperia documentation to confirm the exact package variant and tape-and-reel specifications. Ensure compatibility with automated optical inspection requirements due to the leadless package design. Confirm availability status as distribution channels may vary for this specific part number.
Select this component when a low-profile, small-footprint PNP transistor is required for high-density PCB layouts. The BC856BQBZ offers a distinct advantage over standard SOT23 packages in terms of board space efficiency. Consider the 45 V rating and 100 mA current limit to ensure suitability for the intended circuit load and voltage conditions.
This component belongs to the BC856 series of PNP general-purpose transistors produced by Nexperia. The series includes various gain grades and package options, such as SOT23 and SC-70. The BC856BQBZ specifically represents the B-grade gain variant packaged in the advanced DFN1110D-3 format, distinguishing it from legacy leaded or standard SMD versions.
Direct pin-to-pin replacements include other BC856B variants in different packages, such as BC856B in SOT23. For equivalent performance in the same DFN1110D-3 package, verify cross-reference data sheets for identical voltage and current ratings.