BC856BQC-QZ

Overview

The BC856BQC-QZ is a PNP general-purpose bipolar junction transistor manufactured by Nexperia USA Inc. It operates with a maximum collector-emitter voltage of 65 V and a continuous collector current of 100 mA. The device features a minimum DC current gain (hFE) of 420 at a collector current of 2 mA and a collector-emitter voltage of 5 V. It utilizes the SOT8903A-3 package, also known as DFN1006D-3, which provides a compact footprint suitable for space-constrained designs. The component supports a maximum power dissipation of 250 mW and functions within an operating temperature range from -55°C to +150°C.

Feature Summary

• High DC current gain selection ensures reliable switching performance in low-current applications.
• Compact leadless surface-mount package design facilitates automated optical inspection and reduces board space requirements.
• Robust thermal management capabilities support stable operation under moderate power dissipation conditions.

Applications

• General-purpose signal switching circuits
• Low-voltage amplification stages
• Space-restricted consumer electronics assemblies

Procurement Notes

Verify the specific suffix QZ against official Nexperia documentation to confirm the exact package type and tape-and-reel specifications. Ensure that the procurement channel sources directly from authorized distributors to guarantee authenticity and traceability. Confirm RoHS compliance status and automotive qualification requirements if applicable to your specific end-use environment before finalizing orders.

Selection Notes

Select this component when high current gain is required for efficient base drive control in small-signal applications. The DFN1006D-3 package offers superior thermal performance compared to traditional SOT-23 variants while maintaining a minimal footprint. Consider the 65 V breakdown voltage rating to ensure adequate headroom for the intended circuit supply rails and transient conditions.

Part Context

This part belongs to the Nexperia BC856 series of PNP general-purpose transistors, designed as complements to the BC846 NPN series. The BC856B variant specifically denotes a higher gain bin compared to standard BC856 devices. The QC-QZ suffix indicates the specific packaging and quality configuration used by Nexperia for this particular orderable item.

Replacement Considerations

Direct pin-to-pin replacements include other manufacturers' BC856B equivalents in compatible packages. Verify that substitute parts meet the same hFE minimum of 420 and utilize the DFN1006D-3 or equivalent SOT8903A-3 footprint to ensure mechanical compatibility without PCB redesign.

FAQ

What is the minimum DC current gain for the BC856BQC-QZ?

The minimum DC current gain (hFE) is specified as 420 at a collector current of 2 mA and a collector-emitter voltage of 5 V.

Which package does the BC856BQC-QZ use?

It uses the SOT8903A-3 package, which corresponds to the JEDEC designation DFN1006D-3.

Is the BC856BQC-QZ suitable for high-frequency applications?

While it is a general-purpose transistor, its transition frequency characteristics are optimized for standard switching and amplification rather than high-frequency RF operations.