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Product Detailed Parameters
- Description：TRANS PNP 65V 0.1A DFN1412D-3
- Series：BC856xQC
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：PNP
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：65 V
- Vce Saturation (Max) @ Ib, Ic：650mV @ 5mA, 100mA
- Current - Collector Cutoff (Max)：15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：220 @ 2mA, 5V
- Power - Max：360 mW
- Frequency - Transition：100MHz
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount, Wettable Flank
- Package / Case：3-XDFN Exposed Pad
- Supplier Device Package：DFN1412D-3
- Grade：-
- Qualification：-
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Overview
The BC856BQCZ is a PNP general-purpose transistor manufactured by Nexperia USA Inc. It features a maximum collector-emitter voltage (VCEO) of 65 V and a continuous collector current (Ic) of 100 mA. The device utilizes silicon technology and is housed in an ultra-small DFN1110D-3 (SOT8015) leadless surface-mount package with side-wettable flanks. Key electrical parameters include a DC current gain (hFE) minimum of 220 at 2 mA and 5 V, and a transition frequency (fT) of 100 MHz. Power dissipation is rated at 200 mW, with a collector-emitter saturation voltage of 600 mV max at 5 mA base and 100 mA collector currents.
Feature Summary
- Ultra-small leadless SMD plastic package with side-wettable flanks for improved solder joint visibility
- Suitable for automatic optical inspection (AOI) processes
- Low package height of 0.5 mm for space-restricted applications
Applications
- General-purpose switching
- Amplification circuits
- Space-restricted electronic designs
Procurement Notes
Verify the specific suffix 'QCZ' against official Nexperia documentation to confirm exact tape-and-reel specifications and marking codes. Ensure compatibility with automated assembly equipment requiring side-wettable flank packages. Confirm RoHS compliance status through the manufacturer's latest environmental declaration before final procurement integration.
Selection Notes
Select this component when a compact PNP transistor with 65 V rating and 100 mA current capacity is required. The DFN1110D-3 package offers a smaller footprint compared to conventional leaded SMD packages like SOT23. Consider the side-wettable flanks for enhanced thermal performance and reliable AOI inspection during manufacturing.
Part Context
This part belongs to the BC856 series of general-purpose PNP transistors from Nexperia. It serves as the complement to the BC846AQB NPN transistor within the same DFN1110D-3 package family. The series is designed for low-voltage, low-current applications where minimal board space is a critical constraint.
Replacement Considerations
The BCM846BSH is the NPN/NPN complement in the SOT363 package. For direct pin-compatible replacements in different packages, consult the BC856B datasheet for equivalents in SOT23 or SOT323 formats.
