BC856BW-HF

Overview

The BC856BW-HF is a PNP bipolar junction transistor manufactured by Comchip Technology. It utilizes silicon epitaxial planar die construction and is housed in an SOT-323-3 surface-mount package. Key electrical ratings include a collector-emitter voltage of 65 V, a collector-base voltage of 80 V, and an emitter-base voltage of 5 V. The device supports a continuous collector current of 100 mA with a power dissipation of 150 mW. It operates within a temperature range of -65°C to +150°C and features a DC current gain (hFE) ranging from 220 to 475.

Feature Summary

• PNP polarity configuration for general-purpose switching and amplification
• Automotive-grade reliability with extended thermal operating limits
• Compact SMD footprint suitable for space-constrained PCB layouts

Applications

• General-purpose signal switching circuits
• Low-power amplifier stages
• Automotive electronic control modules

Procurement Notes

Verify the specific suffix 'BW' against official datasheets to confirm voltage and gain binning. Ensure RoHS compliance documentation matches current regulatory requirements. Confirm lead-free status and halogen-free specifications prior to integration into final assemblies.

Selection Notes

Select this component when a PNP transistor with 65V collector-emitter rating and 100mA current capacity is required. The SOT-323-3 package offers a smaller footprint compared to standard SOT-23 variants. Verify that the hFE range of 220-475 meets the specific circuit gain requirements.

Part Context

This part belongs to the BC856 series of small-signal PNP transistors produced by Comchip Technology. It shares the same physical package and basic topology as other members of the family but may differ in specific electrical parameter bins such as voltage ratings or current gain thresholds defined by the manufacturer's grading system.

Replacement Considerations

BC856BW-G is a verified alternative from the same manufacturer offering identical electrical characteristics and packaging.