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The BC856BW,115 is a single PNP general-purpose bipolar junction transistor manufactured by Nexperia. It utilizes silicon technology and is housed in an SOT-323 (SC-70) surface-mount package. Key electrical ratings include a maximum collector-emitter voltage of 65 V, a maximum collector-base voltage of 80 V, and a maximum emitter-base voltage of 5 V. The device supports a continuous DC collector current of 100 mA with a power dissipation capacity of 200 mW. It features a transition frequency of 100 MHz and operates within a temperature range of -65 °C to +150 °C.
Verify the specific suffix '115' corresponds to the required tape-and-reel packaging format upon ordering. Confirm RoHS compliance status and moisture sensitivity level requirements against the target application environment. Ensure the selected distributor provides traceable documentation matching the Nexperia manufacturing standards for this specific part number.
Select this component when a single PNP transistor with a 65 V rating and 100 mA current capability is required in a compact SOT-323 footprint. Consider the 200 mW power dissipation limit and the 100 MHz transition frequency for high-speed switching needs. Evaluate thermal management constraints due to the small package size during circuit design.
This component belongs to the BC856 series of PNP general-purpose transistors produced by Nexperia. It serves as the complement to NPN devices like the BC846 series. The BC856 family offers standardized electrical characteristics across various gain ranges and package options, providing designers with flexibility for mass production while maintaining consistent performance parameters.
Direct substitutes include other BC856 variants such as BC856B or BC856A if gain specifications align. Cross-reference with industry-standard equivalents like 2SB719 or SS8550, ensuring pinout compatibility and voltage/current ratings meet or exceed the original design requirements.