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The BC856BWE6327BTSA1 is a PNP general-purpose bipolar junction transistor manufactured by Infineon Technologies. It is housed in the SOT-323 surface-mount package and features a maximum collector-emitter voltage (VCEO) of 45 V and a continuous collector current (IC) of 100 mA. The device supports a peak DC collector current of 200 mA with a total power dissipation of 200 mW. Its transition frequency (fT) reaches 150 MHz, ensuring effective performance at high frequencies. The component operates within a temperature range from -55 °C to +150 °C.
Verify the specific ordering suffix against official Infineon documentation to confirm exact electrical tolerances and tape-and-reel specifications. Ensure compatibility with standard SMT reflow profiles and check for RoHS compliance status in the latest material content data sheet before integration into production.
Select this component when a compact PNP transistor with moderate voltage ratings and high-speed switching characteristics is required. Compare fT and saturation voltage parameters against alternative SOT-323 devices to ensure suitability for the target circuit's bandwidth and efficiency requirements.
This part belongs to the BC856 series of general-purpose transistors. It shares the same physical footprint as other variants in the family but differs in gain binning and specific electrical limits. It serves as a direct replacement for legacy components in existing PCB layouts requiring PNP logic or amplification functions.
Direct substitutes include BC856BW and BC856B. Verify pinout compatibility and thermal resistance values when replacing similar packages.