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The BC856BWHE3-TP is a PNP general-purpose small-signal transistor manufactured by Micro Commercial Components. It features a collector current of -100 mA and a power dissipation of 150 mW in an SOT-323 package. The device offers a collector-base voltage of -80 V, a collector-emitter voltage of -65 V, and an emitter-base voltage of -5 V. Electrical characteristics include a transition frequency of 100 MHz and a DC current gain ranging from 125 to 800 depending on the sub-grade.
Verify that the ordering suffix HE3 indicates RoHS compliance and halogen-free status as specified by the manufacturer. Confirm the specific sub-grade (B) matches the required DC current gain range of 125 to 800. Ensure the component is sourced from authorized distributors to guarantee traceability and adherence to MCC quality standards for storage and handling.
Select this component when a PNP transistor with high breakdown voltages (-80V CBO, -65V CEO) is required in a compact SOT-323 footprint. The AEC-Q101 qualification makes it suitable for automotive environments. Consider the B-subgrade if a higher minimum DC current gain is necessary compared to the AW variant.
This part belongs to the BC856AWHE3 through BC858CWHE3 series of PNP transistors. It shares the same physical SOT-323 package and basic electrical limits but differs in DC current gain specifications based on the middle letter code. The BC856BWHE3-TP specifically denotes the B-gain bin within the BC856 family.
BC856BW-TP
The device marking code is 3B.
Yes, the 'P' suffix designates that the component is lead-free and RoHS compliant.
The maximum thermal resistance from junction to ambient is 833°C/W.