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The BC856C is a surface-mount general-purpose PNP bipolar junction transistor manufactured by Diotec Semiconductor. It operates with a maximum collector current of 100 mA and a collector-emitter voltage of 65 V. The device features three distinct DC current gain groups, with the 'C' suffix indicating the highest group (hFE min 420 at IC = 2 mA). It has a power dissipation rating of 300 mW when mounted on a PCB and supports a junction temperature range from -55°C to +150°C.
Verify that the ordering suffix matches the required performance grade. The '-C' suffix designates the commercial grade with the highest specified current gain group. Confirm compliance requirements such as AEC-Q101 if automotive standards are necessary, which requires specific suffixes like '-Q' or '-AQ'. Ensure the package type aligns with the target PCB layout constraints.
Select the BC856C when high current gain is required for low base drive currents. The 65 V collector-emitter voltage provides headroom for higher voltage logic interfaces compared to lower-rated variants. Consider the thermal resistance characteristics and ensure adequate copper pad area on the PCB to maintain the rated 300 mW power dissipation capability under operating conditions.
This component belongs to the BC856...BC860 series of SMD general-purpose PNP transistors. It serves as the complementary counterpart to NPN transistors within the same family, specifically the BC846 through BC850 series. The series offers standardized mechanical data and pin configurations across multiple voltage and gain variants.
Direct functional substitutes within the same manufacturer series include BC857C and BC859C. Note that these alternatives operate at different collector-emitter voltages (45 V and 30 V respectively) compared to the 65 V rating of the BC856C.