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The BC856S/ZLH is a dual PNP bipolar junction transistor (BJT) array manufactured by Nexperia USA Inc. It utilizes silicon technology and is housed in a surface-mount SOT-363 (SC-88, TSSOP-6) package. The device features a maximum DC collector current of 100 mA and a collector-emitter breakdown voltage (VCEO) of 65 V. Additional voltage ratings include a collector-base voltage (VCBO) of 80 V and an emitter-base voltage (VEBO) of 5 V. The component has a power dissipation rating of 300 mW, a transition frequency (fT) of 100 MHz, and operates within a temperature range of -65°C to +150°C.
Verify the specific suffix ZLH against official Nexperia documentation to confirm packaging details and compliance status. Ensure the ordering part number matches the required reel or cut tape specifications. Cross-reference the manufacturer's datasheet for the BC856S series to validate electrical parameters before procurement.
Select this component when a dual PNP transistor array is required in a small surface-mount footprint. The BC856S offers a balance of 65 V blocking capability and 100 mA current handling. Compare against single-transistor alternatives if space allows, but prioritize this array for designs requiring matched pairs in minimal board area.
The BC856S belongs to the broader BC856 family of low-voltage PNP transistors from Nexperia. While the standard BC856 uses a SOT23 package, the BC856S variant specifically employs the SOT-363 package to house two transistors. This family is designed for cost-effective solutions in consumer electronics and portable devices where space is constrained.
Publicly confirmed substitutes include other dual PNP arrays in SOT-363 packages such as the NXP Semiconductors (now Nexperia) BC857S or compatible equivalents from other manufacturers like Diodes Incorporated or ON Semiconductor, provided pinouts and electrical ratings match.