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The BC856SH6327XTSA1 is a PNP digital transistor manufactured by Infineon Technologies, housed in a compact SOT-363 (SC-88) surface-mount package. This component integrates two isolated PNP bipolar junction transistors within a single six-pin structure, featuring typical input resistors of 10 kΩ and a typical resistance ratio of 1. It supports a maximum DC collector current of 100 mA and a maximum collector-emitter voltage of 50 V, with a power dissipation rating of 250 mW. Designed for high reliability, the device operates at temperatures up to +150 °C and measures 2 x 1.25 x 0.8 mm.
Verify the exact ordering code against official Infineon documentation to ensure correct suffix identification. Confirm RoHS compliance status through certified material content sheets. Cross-reference datasheet revisions to validate electrical characteristics before finalizing procurement specifications.
Select this component when dual PNP switching functionality is required in minimal board space. Ensure the 50 V collector-emitter voltage rating exceeds the maximum circuit load. Verify that the 100 mA current limit accommodates peak operational demands without exceeding thermal constraints.
This part belongs to Infineon's broad portfolio of small-signal transistors designed for consumer and industrial electronics. The SOT-363 packaging allows for automated surface-mount assembly, supporting high-volume manufacturing processes while maintaining consistent electrical performance across production batches.
Consult official cross-reference lists for verified substitutes. Ensure any alternative maintains identical pinout configuration and electrical ratings to prevent circuit modification.