SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The BC857A-7-F is a PNP small-signal transistor manufactured by Diodes Incorporated, housed in an SOT23 package. It features a collector-emitter voltage of -45 V and a continuous collector current of -100 mA. The device provides a DC current gain (hFE) ranging from 125 to 250 at -2.0 mA and -5 V. Electrical characteristics include a transition frequency of 100 MHz to 200 MHz and a power dissipation capacity of 310 mW. Operating temperatures range from -55°C to +150°C.
Verify the specific ordering suffix '-7-F' against official Diodes Incorporated documentation to confirm the standard 3,000-unit reel packaging configuration. Ensure that the component meets RoHS 3 compliance requirements as defined by EU Directive 2015/863. Confirm that the marking code 'K3A' matches the intended production batch specifications.
Select this component when a PNP transistor with a -45 V collector-emitter breakdown voltage is required. The BC857A variant offers a minimum hFE of 125, suitable for general-purpose amplification. Consider the SOT23 footprint for surface-mount designs requiring compact layouts.
This part belongs to the BC856A–BC858C family of PNP small-signal transistors. The 'A' designation indicates a specific DC current gain binning range compared to the 'B' and 'C' variants within the same datasheet. These devices are designed as complementary pairs to the BC846A–BC848C NPN transistors.
The datasheet identifies the BC858A-7-F as End-of-Life (EOL), explicitly recommending the use of the BC857A-7-F as its direct replacement.