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The BC857AE6327HTSA1 is a small-signal PNP silicon bipolar junction transistor manufactured by Infineon Technologies. It features a single-element configuration housed in an SOT-23 surface-mount package. The device supports a maximum collector current of 100 mA and a collector-emitter voltage rating of 45 V. Key electrical characteristics include a DC current gain (hFE) range of 125 to 800, a power dissipation capacity of 330 mW, and a transition frequency of 250 MHz. It operates within a temperature range of -65 °C to +150 °C.
Verify the specific hFE binning grade required for the application, as the datasheet specifies a wide gain range. Confirm that the SOT-23 footprint matches the PCB design. Check for end-of-life status or obsolescence notices from Infineon, as this component may be subject to production changes. Ensure compatibility with RoHS directives if applicable to the target market.
Select this component when a PNP transistor with moderate current handling and high gain is needed in a compact form factor. The SOT-23 package suits space-constrained designs. Consider the 45 V voltage rating for low-voltage logic systems. Evaluate the thermal requirements against the 330 mW dissipation limit. Compare against other BC857 variants if specific gain bins are mandatory.
This part belongs to the BC857 series of general-purpose PNP transistors. It shares the same physical package and basic electrical structure as other members like BC857A, BC857B, and BC857C, differing primarily in the guaranteed DC current gain ranges. The 'E6327' suffix typically denotes the tape and reel packaging format used for automated assembly.
Direct substitutes include BC857A, BC857B, and BC857C, provided their respective gain specifications meet the circuit requirements. Other generic PNP transistors in SOT-23 packages with similar voltage and current ratings may serve as alternatives if pinout and thermal characteristics align.