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The BC857ALT1G is a PNP silicon general-purpose transistor from the onsemi BC856ALT1G series, housed in an SOT-23 (TO-236) package. It features a collector-emitter voltage of -45 V and a continuous collector current of -100 mA. The device offers a DC current gain ranging from 125 to 475 at specific test conditions. Thermal characteristics include a total device dissipation of 225 mW on an FR-5 board and a junction-to-ambient thermal resistance of 556 °C/W. Operating and storage temperatures span from -55°C to +150°C.
Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct pinout style and packaging configuration. Confirm that the 'S' or 'NSV' prefix requirements align with project specifications for automotive qualification and PPAP compliance. Cross-reference the device marking code with the datasheet to validate authenticity and production batch details before integration.
Select this component when a PNP transistor with a -45 V collector-emitter breakdown voltage is required. Ensure the application current remains within the -100 mA continuous limit. Consider the SOT-23 package dimensions for PCB layout constraints. Verify that the DC current gain range meets the circuit biasing requirements under expected operating temperatures.
This part belongs to the BC856ALT1G series, which includes complementary NPN devices like the BC846ALT1G. The series provides matched electrical characteristics for differential pairs and push-pull configurations. The ALT1G designation indicates specific manufacturing controls and lead-free packaging standards defined by onsemi for high-reliability applications.
Direct substitutes include other manufacturers' BC857 variants in SOT-23 packages, such as those from Nexperia or LRC. Verify pin compatibility and electrical parameters like V(BR)CEO and hFE ranges. Automotive replacements must meet AEC-Q101 standards if the original application requires it.