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The BC857AQAZ is a PNP general-purpose bipolar junction transistor manufactured by Nexperia. It operates with a maximum collector current of 100 mA and features a collector-emitter voltage rating of 45 V. The device utilizes a DFN1010D-3 surface-mount package, providing a power dissipation capacity of 280 mW. Key electrical specifications include a transition frequency of 100 MHz and a collector-emitter saturation voltage of 650 mV. It is qualified under the AEC-Q101 standard for automotive applications and supports an operating temperature range from -55°C to +150°C.
Verify the manufacturer designation carefully, as official documentation attributes this specific part number to Nexperia rather than NXP USA Inc. Confirm the package type corresponds to DFN1010D-3 and ensure the AEC-Q101 automotive qualification status matches project requirements before finalizing procurement orders.
Select this component when a small-footprint PNP transistor with automotive reliability is required. The DFN1010D-3 package offers space efficiency compared to traditional SOT packages. Ensure the application demands do not exceed the 100 mA continuous current limit or the 45 V voltage breakdown threshold defined in the datasheet.
This component belongs to the BC857 series of PNP general-purpose transistors. The 'A' suffix typically denotes specific DC gain binning, while 'QAZ' indicates the automotive qualification and specific tape-and-reel packaging configuration. It serves as a compact alternative to larger leaded packages for modern PCB designs.
Compatible substitutes within the same family include BC857AW and BC857AQA. Verify that any replacement maintains the required DFN1010D-3 footprint and meets the necessary AEC-Q101 automotive grade specifications for the target application.