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Product Detailed Parameters
- Description：TRANS PNP 45V 0.1A SOT-523
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：PNP
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：45 V
- Vce Saturation (Max) @ Ib, Ic：650mV @ 5mA, 100mA
- Current - Collector Cutoff (Max)：15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：125 @ 2mA, 5V
- Power - Max：150 mW
- Frequency - Transition：100MHz
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-523
- Supplier Device Package：SOT-523
- Grade：-
- Qualification：-
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Overview
The BC857AT-7-F is a PNP small signal transistor manufactured by Diodes Incorporated, housed in an SOT-523 surface-mount package. It features a collector-emitter voltage (VCEO) of -45 V and a maximum DC collector current (IC) of -100 mA. The device utilizes epitaxial planar die construction and offers a minimum DC current gain (hFE) of 125 at IC = -2 mA and VCE = -5 V. Electrical characteristics include a collector-base breakdown voltage (BVCBO) of -50 V and a gain-bandwidth product (fT) of 100 MHz. Thermal performance specifies a power dissipation of 150 mW and an operating temperature range from -55 °C to +150 °C.
Feature Summary
- Epitaxial planar die construction for switching and amplifier applications
- Qualified to AEC-Q101 standards for high reliability
- Totally lead-free and fully RoHS compliant with halogen and antimony-free green compound
Applications
- Switching circuits
- Audio frequency (AF) amplifiers
- General-purpose signal processing
Procurement Notes
Verify the specific suffix '-7-F' corresponds to the 3-inch reel packaging containing 3,000 units per reel as documented in the ordering information. Confirm that the 'A' marking code aligns with the AT gain bin requirements for your design. Ensure compliance with moisture sensitivity level 1 handling procedures during assembly.
Selection Notes
Select this component when a compact PNP transistor is required for low-voltage applications. The SOT-523 package provides space efficiency compared to larger packages. Consider the hFE binning options if precise current gain matching is necessary, noting that the AT variant guarantees a minimum gain of 125 under specified test conditions.
Part Context
This part belongs to the BC857 series of PNP transistors produced by Diodes Incorporated. It serves as the complement to the BC847 NPN series. The device is designed for general-purpose use in portable electronics and consumer devices where small form factors and high reliability are prioritized.
Replacement Considerations
BC857BT-7-F, BC857CT-7-F
FAQ
What is the ESD rating for the BC857AT-7-F?
The device has an Electrostatic Discharge Human Body Model (HBM) rating of 4,000 V according to JEDEC Class 3A.
Is the BC857AT-7-F suitable for automotive applications?
Yes, the device is qualified to AEC-Q101 standards for high reliability, making it suitable for automotive environments.
What is the maximum collector-base breakdown voltage?
The maximum collector-base breakdown voltage (BVCBO) is -50 V when measured at IC = -100µA and IE = 0.
