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Product Detailed Parameters
- Description：TRANS PNP 45V 0.1A SOT-523
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：PNP
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：45 V
- Vce Saturation (Max) @ Ib, Ic：650mV @ 5mA, 100mA
- Current - Collector Cutoff (Max)：15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：125 @ 2mA, 5V
- Power - Max：150 mW
- Frequency - Transition：100MHz
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-523
- Supplier Device Package：SOT-523
- Grade：-
- Qualification：-
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Overview
The BC857AT-7 is a PNP small signal transistor manufactured by Diodes Incorporated, housed in an SOT-523 surface-mount package. It features epitaxial planar die construction and supports a collector current of -100 mA with a collector-emitter breakdown voltage (BVCEO) of -45 V. The device operates within a temperature range of -55°C to +150°C and dissipates up to 150 mW. Electrical characteristics include a DC current gain (hFE) ranging from 125 to 800 depending on the bin, a gain-bandwidth product (fT) of 100 MHz, and a collector-base breakdown voltage (BVCBO) of -50 V.
Feature Summary
- Epitaxial planar die construction for reliable switching performance
- Ultra-small SOT-523 surface mount package design
- Qualified to AEC-Q101 standards for high reliability applications
Applications
- Switching circuits
- Audio frequency (AF) amplifier applications
Procurement Notes
Verify that the ordered part number matches the specific gain bin required for the circuit design, as the BC857AT designation indicates a specific hFE range. Confirm compliance requirements such as RoHS and halogen-free status if mandated by the project specifications. Ensure the packaging format aligns with automated assembly equipment capabilities.
Selection Notes
Select this component when a compact PNP transistor with moderate current handling and high voltage tolerance is needed. The SOT-523 footprint is suitable for space-constrained designs. Consider the specific hFE bin (A, B, or C) based on the required amplification factor, noting that the 'AT' suffix corresponds to the lowest gain bin among the series options.
Part Context
This component belongs to the BC857 series of PNP transistors produced by Diodes Incorporated. It is electrically complementary to the BC847AT NPN transistor. The series includes variants with different gain bins (BT, CT) and dual configurations (BC857BV), all sharing similar voltage and current ratings but differing in package type or electrical gain characteristics.
Replacement Considerations
Direct replacements include BC857BT-7-F and BC857CT-7-F from Diodes Incorporated, which share the same package and ratings but offer higher minimum DC current gains. Other manufacturers producing equivalent 45V PNP SOT-523 transistors may also be considered if pinout and thermal characteristics match.
FAQ
What is the maximum power dissipation of the BC857AT-7?
The maximum power dissipation is 150 mW at an ambient temperature of +25°C.
Is the BC857AT-7 compliant with automotive standards?
Yes, the device is qualified to AEC-Q101 standards for high reliability.
What is the ESD rating for the BC857AT-7?
The Human Body Model (HBM) ESD rating is 4,000 V (JEDEC Class 3A).
