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The BC857AW-7-F is a PNP small signal transistor manufactured by Diodes Incorporated, housed in an SOT323 surface-mount package. It features a collector-emitter voltage of -45 V and a continuous collector current of -100 mA. The device offers a transition frequency up to 200 MHz and a DC current gain ranging from 220 to 475 for the B group. It operates within a temperature range of -55°C to +150°C and dissipates up to 200 mW.
Verify the specific suffix '7-F' against official Diodes Incorporated documentation to confirm standard packaging quantities and reel specifications. Ensure compliance with RoHS 3 directives and confirm that the selected variant meets the required AEC-Q reliability standards if intended for automotive-grade deployment.
Select this component when a PNP transistor with a -45 V collector-emitter breakdown voltage is required. The B-group gain specification suits applications needing moderate amplification factors. Verify thermal management requirements against the 625 °C/W junction-to-ambient resistance rating for steady-state operation on FR4 substrates.
This part belongs to the BC856AW–BC858CW series of PNP small signal transistors. The BC857 variant specifically provides a -45 V collector-emitter voltage rating, distinguishing it from the lower-voltage BC858 (-30 V) and higher-voltage BC856 (-65 V) models within the same SOT323 footprint family.
Direct functional replacements include the BC857BW-7-F and BC857CW-7-F from Diodes Incorporated, which share the identical SOT323 package and electrical characteristics but differ only in their DC current gain grouping.