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The BC857AW-G is a PNP silicon bipolar junction transistor manufactured by Comchip Technology. It features a collector-base voltage of 50 V and a continuous collector current rating of 100 mA. The device operates within a temperature range of -65 °C to +150 °C and dissipates up to 200 mW of power. Packaged in an SOT-323-3 surface-mount format, it offers a maximum DC current gain (hFE) of 800.
Verify the specific suffix 'AW' against official datasheets to confirm gain binning requirements. Ensure the SOT-323-3 package dimensions align with PCB footprint constraints. Confirm RoHS compliance status through manufacturer documentation before integration into regulated assemblies.
Select this component when a PNP transistor with a 50 V collector-base voltage rating is required. The 100 mA current capacity suits low-power signal handling tasks. Consider the SOT-323-3 package for space-constrained surface-mount designs requiring high gain characteristics.
This part belongs to the BC857 series of small-signal PNP transistors. It serves as a general-purpose alternative to other industry-standard PNP devices. The AW suffix typically denotes specific hFE grading within the product line.
Cross-reference with standard BC857A equivalents for pin-compatible substitution. Verify that replacement parts meet the same 50 V VCBO and 100 mA IC specifications.