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The BC857AW-TP is a PNP bipolar junction transistor manufactured by Micro Commercial Components. It utilizes silicon epitaxial die construction and is housed in an SOT-323 surface-mount package. The device supports a maximum continuous collector current of 100 mA and offers a collector-emitter breakdown voltage (VCEO) of 45 V, with a collector-base breakdown voltage (VCBO) of 50 V. Key electrical parameters include an emitter-base breakdown voltage (VEBO) of 5 V, a transition frequency (fT) of 100 MHz, and a power dissipation rating of 150 mW. The component operates within a temperature range of -65°C to +150°C.
Verify the specific suffix against official MCC documentation to confirm pinout orientation and electrical tolerances. Ensure the ordering code matches the required gain binning and packaging format. Cross-reference the manufacturer part number with authorized distributor listings to validate authenticity and compliance with RoHS directives before finalizing procurement.
Select this component when a small-signal PNP transistor with automotive qualification is required. The SOT-323 package provides space efficiency for compact designs. Consider the complementary BC848AW-TP for NPN requirements. Evaluate thermal management needs based on the 150 mW dissipation limit and ensure operating currents remain within the 100 mA continuous rating.
This component belongs to the BC857 series of general-purpose PNP transistors produced by Micro Commercial Components. The 'A' designation typically indicates specific DC current gain characteristics, while the 'W' suffix denotes the SOT-323 surface-mount package. The 'TP' suffix signifies that the device meets lead-free and RoHS compliance standards as defined by the manufacturer's product line specifications.
Public confirmed substitute part numbers: BC857BWHE3-TP.